http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



STMicroelectronics Electronic Components Datasheet


T1630

SNUBBERLESS TRIAC



No Preview Available !

T1630 pdf
T1620W
® T1630W
SNUBBERLESS TRIAC
FEATURES
ITRMS = 16 A
VDRM = VRRM = 400V to 700V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
DESCRIPTION
The T1620/1630W triacs use high performance
glass passivated chip technology, housed in a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A2
A1
G
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
Value
Unit
RMS on-state current
(360° conduction angle)
Tc= 75°C
16 A
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
165
A
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
195
190
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Repetitive
F = 50 Hz
20 A/µs
Non Repetitive
100
Storage temperature range
Operating junction temperature range
- 40 to + 150 °C
- 40 to + 125
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260 °C
Symbol
Parameter
VDRM
VRRM
April 1995
Repetitive peak off-state voltage
Tj = 125°C
T1620 / 1630-xxxW
400 600 700
400 600 700
Unit
V
1/5



No Preview Available !

T1630 pdf
T1620W / 1630W
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
2.5
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1620 T1630 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20
30 mA
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG = 500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH * IT= 250mA Gate open
Tj= 25°C
MAX 35
50
VTM * ITM= 22.5A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt * Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 9 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a
snuber R-C network accross T1620W / T1630W triacs.
2/5
®



Part Number T1630
Description SNUBBERLESS TRIAC
Maker ST Microelectronics - ST Microelectronics
Total Page 5 Pages
PDF Download
T1630 pdf
Download PDF File
T1630 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
T16 TRIACS T16
ST Microelectronics
PDF
T16 Diode (spec sheet) T16
American Microsemiconductor
PDF
T1610 logic level and standard Triacs T1610
STMicroelectronics
PDF
T1612BH Triacs T1612BH
Tag Semiconductors
PDF
T1612MH STANDARD TRIACS T1612MH
ST Microelectronics
PDF
T1612NH STANDARD TRIACS T1612NH
ST Microelectronics
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components