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Taiwan Memory Technology
Taiwan Memory Technology


T14L2M16A

128K X 16 HIGH SPEED CMOS STATIC RAM


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tm TE
CH
SRAM
FEATURES
Fast access time : 8/10/12/15 ns
Low-power consumption :
Stand-by current (CMOS input/output)
Max. 300 uA
Single +3.0V to 3.6V Power Supply
TTL compatible , Tri-state output
Common I/O capability
Automatic power-down when deselected
Available in 44-PIN TSOP-II and 48-pin CSP
packages
PART NUMBER EXAMPLES
Part Number
T14L2M16A-10S
T14L2M16A-12C
T14L2M16A-10S
T14L2M16A-12C
Access time
10ns
12ns
10ns
12ns
Package
TSOP-II
CSP
TSOP-II
CSP
Preliminary T14L2M16A
128K X 16 HIGH SPEED
CMOS STATIC RAM
GENERAL DESCRIPTION
The T14L2M16A is a very fast access time
CMOS Static RAM, organized as 131,072 words
by 16 bits . This device is fabricated by high
performance CMOS technology. It can be operated
under wide power supply voltage range from
+3.0V to +3.6V.
The T14L2M16A inputs and three-state
outputs are TTL compatible and allow for direct
interfacing with common system bus structures.
Data retention is guaranteed at a power supply
voltage as low as 2V.
BLOCK DIAGRAM
Vcc
Vss
A0 DECODER
.
.
.
A16
CORE
ARRAY
CE
WE CONTROL
OE
LB
CIRCUIT
UB
DATA I/O
I/O1
.
.
.
I/O16
TM Technology Inc. reserves the right
P. 1
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: AUG. 2002
Revision:0.A



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tm TE
CH
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP-II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
123456
A LB OE A0 A1 A2 NC
B I/O9
UB
A3
A4
CE I/O1
C I/O10
I/O11
A5
A6
I/O2
I/O3
D VSS
I/O12
NC
A7
I/O4
VCC
E VCC
I/O13
NC
A16
I/O5
VSS
F I/O15
I/O14
A14
A15
I/O6
I/O7
G I/O16
NC
A12
A13
WE
I/O8
H NC
A8
A9
A10
A11
NC
Preliminary T14L2M16A
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
48-Ball CSP TOP VIEW (Ball Down)
PIN DESCRIPTIONS
SYMBOL DESCRIPTIONS
A0 ~ A16 Address inputs
I/O1~I/O16 Data inputs/outputs
CE Chip enable
WE Write enable input
OE Output enable input
SYMBOL DESCRIPTIONS
LB Lower byte (I/O 1~8)
UB Upper byte (I/O 9~16)
VCC Power supply
VSS Ground
NC No connection
TM Technology Inc. reserves the right
P. 2
to change products or specifications without notice.
Publication Date: AUG. 2002
Revision:0.A
DataSheet4 U .com



Part Number T14L2M16A
Description 128K X 16 HIGH SPEED CMOS STATIC RAM
Maker Taiwan Memory Technology - Taiwan Memory Technology
Total Page 12 Pages
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