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Taiwan Memory Technology
Taiwan Memory Technology


T14L256A

32K X 8 HIGH SPEED CMOS STATIC RAM


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tm TE
CH
SRAM
T14L256A
32K X 8 HIGH SPEED
CMOS STATIC RAM
FEATURES
High speed access time: 8/10/12/15ns(max.)
Low power consumption : Active 300 mW (typ.)
Single + 3.3 power supply
Fully static operation – No clock or refreshing
required
All inputs and outputs directly LVTTL compatible
Common I/O capability
Available packages :28-pin 300 mil, SOJ and
TSOP-I (forward type).
Output enable (OE ) available for very fast
access
PIN CONFIGURATION
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
SOJ
28 Vcc
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CS
19 I/O8
18 I/O7
17 I/O6
16 I/O5
15 I/O4
OE 1
A11 2
A9 3
A8 4
A13 5
WE 6
VCC 7
A14 8
A12 9
A7 10
A6 11
A5 12
A4 13
A3 14
TSOP-I
28 A10
27 CS
26 I/O8
25 I/O7
24 I/O6
23 I/O5
22 I/O4
21 VSS
20 I/O3
19 I/O2
18 I/O1
17 A0
16 A1
15 A2
GENERAL DESCRIPTION
The T14L256A is a high speed, low power
CMOS static RAM organized as 32,768 x 8 bits
that operates on a single 3.3-volt power supply.
This device is packaged in a standard 28-pin 300
mil SOJ or TSOP-I forward.
BLOCK DIAGRAM
Vcc
VSS
A0
.
..
A 14
DECODER
CORE
ARRAY
CS
OE CONTROL
WE
DATA I/O
I/O 1
...
I/O 8
PIN DESCRIPTION
SYMBOL
A0 - A14
I/O1 - I/O8
CS
WE
OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
PART NUMBER EXAMPLES
PACKAGE SPEED
T14L256A-8J SOJ
8ns
T14L256A-8P TSOP-I
8ns
Taiwan Memory Technology, Inc. reserves the right P. 1
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: APR. 2001
Revision: E



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T14L256A pdf
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tm TE
CH
T14L256A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage to Vss Potential
Inputs to Vss Potential
Power Dissipation
Storage Temperature
RATING
-0.5 to + 4.6
-0.5 to Vcc +0.5
1.0
-60 to +150
UNIT
V
V
W
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
VIL
VIH
TA
MIN
Typ-5%
-0.3
2.1
0
TYP
3.3
-
-
-
MAX
Typ+5%
0.8
Vcc+0.3
70
UNIT
V
V
V
°C
TRUTH TABLE
CS OE
HX
LH
LL
LX
WE
X
H
H
L
MODE
Not Selected
Output Disable
Read
Write
I/O1- I/O8
High-Z
High-Z
Data Out
Data In
Vcc
ISB, I SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V ± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER
Input Leakage Current
SYM.
TEST CONDITIONS
ILIVin=Vss to Vcc
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
ILO
VOL
VOH
Icc
VI/O=Vss to Vcc , CS =VIH or
OE = VIH or WE = VIL
IOL= + 8.0mA
IOH= - 4.0mA
CS =VIL, I/O=0mA
Cycle = MIN.
8
10
Duty = 100%
12
Standby Power
Supply Current
15
ISB CS=VIH, Cycle=MIN, Duty=100%
ISB1 CS Vcc-0.2V
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
MIN.
-10
-10
-
2.4
-
-
-
-
-
-
TYP. MAX. UNIT
- +10 uA
- +10 uA
- 0.4 V
- -V
- 110 mA
- 100 mA
- 90 mA
- 80 mA
- 15 mA
- 2 mA
Taiwan Memory Technology, Inc. reserves the right P. 2
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: APR. 2001
Revision: E



Part Number T14L256A
Description 32K X 8 HIGH SPEED CMOS STATIC RAM
Maker Taiwan Memory Technology - Taiwan Memory Technology
Total Page 9 Pages
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