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Taiwan Memory Technology
Taiwan Memory Technology


T14L1024A

128K X 8 HIGH SPEED CMOS STATIC RAM


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T14L1024A pdf
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tm TE
CH
SRAM
Preliminary T14L1024A
128K X 8 HIGH SPEED
CMOS STATIC RAM
FEATURES
Fast Address Access Times : 10/12/15ns
Single 3.3V ±0.3V power supply
Low Power Consumption : 110/105/100mA
TTL I/O compatible
2.0V data retention mode
Automatic power-down when deselected
Available packages :
32-pin 300 mil DIP/SOJ & 32-pin SOP/TSOP-I
Industry Standard Pin Assignment
PIN CONFIGURATION
NC
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
DIP
/
SOJ
/
SOP
32 Vcc
31 A11
30 CE2
29 WE
28 A12
27 A13
26 A14
25 A15
24 OE
23 A16
22 CE1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A15
A14
A13
A12
WE
CE2
A11
VCC
NC
A10
A9
A8
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-I
32 OE
31 A16
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
GENERAL DESCRIPTION
The T14L1024A is a one-megabit density, fast
static random access memory organized as 131,072
words by 8 bits. It is designed for use in high
performance memory applications such as main
memory storage and high speed communication
buffers. Fabricated using high performance CMOS
technology, access times down to 10ns are achieved.
Memory expansion by banking is easily
accomplished using the chip enable pins CE1 and
CE2. This device is packaged in a standard 32-pin
300 mil DIP/SOJ and 32-pin SOP/TSOP-I.
BLOCK DIAGRAM
Vcc
Vss
A0
...
DECODER
.
A16
CORE
ARRAY
CE1
CE2
WE
OE
DATA I/O
I/O0
..
.
I/O7
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O0 - I/O7
/CE1,CE2
/WE
/OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
PART NUMBER EXAMPLES
PACKAGE
SPEED
T14L1024A-10J SOJ 300mil
10ns
T14L1024A-10P TSOP-I 8x13.4mm 10ns
T14L1024A-10H TSOP-I 8x20mm 10ns
T14L1024A-10N DIP 300mil
10ns
T14L1024A-10D SOP
10ns
TM Technology, Inc. reserves the right
P. 1
to change products or specifications without notice.
Publication Date: SEP. 2002
Revision:0.F
DataSheet4 U .com



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T14L1024A pdf
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tm TE
CH
Preliminary T14L1024A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperatrue
Storage Temperature
Power Dissipation
Short Circuit Output Current
SYM
Vcc
VIN
VOUT
TOPR
TSTG
PD
IOUT
RATING
-0.5 to 4.6
-0.5 to Vcc+0.5
-0.5 to Vcc+0.5
0 to +70
-55 to +150
1.0
50
UNIT
V
V
V
°C
°C
W
mA
TRUTH TABLE
CE1 CE2 OE WE
MODE
H X X X Not Selected
X L X X Not Selected
L H H H Output Disable
L HLH
Read
L HXL
Write
I/O0- I/O7
High-Z
High-Z
High-Z
Data Out
Data In
Vcc
ISB, ISB1
ISB, ISB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V ±0.3V, Ta = 0 to 70°C)
PARAMETER
Power Supply Voltage
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
Vcc
VIL
VIH
ILI
ILO
VOL
VOH
Icc
ISB
ISB1
TEST CONDITIONS
VIN =Vss to Vcc
VIN=Vss to Vcc , CE1 = VIH or CE2
= VIL or OE = VIH or WE = VIL
IOL = 4.0 mA
IOH =-2.0 mA
CE1 =VIL
10ns
CE2 = VIH ;f=max
12ns
IO = 0mA
15ns
CE1 =VIH, CE2 = VIL, IO = 0mA
Vcc = max; CE1 > Vcc-0.2V or CE2<
Vss+0.2V; f=0mhz; IO = 0mA
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25°C
MIN.
3.0
-0.5
2.1
-
-
-
2.4
-
-
-
-
-
MAX.
3.6
0.8
Vcc+0.3
5
UNIT
V
V
V
uA
5 uA
0.4 V
-V
110 mA
105 mA
100 mA
25 mA
5 mA
TM Technology, Inc. reserves the right
P. 2
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: SEP. 2002
Revision:0.F



Part Number T14L1024A
Description 128K X 8 HIGH SPEED CMOS STATIC RAM
Maker Taiwan Memory Technology - Taiwan Memory Technology
Total Page 12 Pages
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