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T143-500

Phase Control Thyristor



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T143-500 pdf
PROTON – ELECTROTEX
RUSSIA
Optimum power handling
Low on-state and switching losses
Designed for traction and industrial applications
Phase Control Thyristor
Type Т143-500
Mean on-state current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Turn-off time
VDRM, VRRM, V
www.DataShVeeot4ltUa.gceomcode
Tj, °C
400
4
600
6
ITAV
VDRM
VRRM
tq
800 1000
8 10
– 60 ÷ 125
500 A
400 ÷ 1600 V
160; 250; 500 µs
1200
12
1400
14
1600
16
MAXIMUM ALLOWABLE RATINGS
Symbols and parameters
ON-STATE
ITAV Mean on-state current
ITRMS
RMS on-state current
ITSM Surge on-state current
I2t Circuit fusing considerations
BLOCKING
VDRM, VRRM
Repetitive peak off-state and
Repetitive peak reverse voltages
VDSM, VRSM
Non-repetitive peak off-state and
Non-repetitive peak reverse voltages
VD, VR
Direct off-state and
Direct reverse voltages
TRIGGERING
PGM Peak gate power dissipation
PG(AV)
Mean gate power dissipation
VRGM
Peak gate reverse voltage
SWITCHING
(diT/dt)crit
Critical rate of rise of
on-state current:
non-repetitive
repetitive
THERMAL
Tstg Storage temperature
Tj Junction temperature
Units Values
A
A
kA
A2s.103
500
1160
11.0
12.0
605
720
V 400÷1600
V 450÷1800
V
0.75.VDRM
0.75.VRRM
W 40
W6
V5
A/µs
200
100
°C – 60 ÷ 50
°C – 60 ÷ 125
Test conditions
Tc=94 °C;
180° half-sine wave, 50 Hz
Tc=94 °C;
Full cycle sine wave, 50 Hz
Tj=Tj max
Tj=25°C
Tj=Tj max
Tj=25°C
180° half-sine wave, 50 Hz,
single pulse;
VR=0 V;
Gate pulse: 20 V, 5 ,
1 µs rise time, 50 µs
Tj=Tj max;
180° half-sine wave, 50 Hz;
Gate open
Tj= Tj max;
180° half-sine wave, 50 Hz,
single pulse
Gate open
Tj=Tj max;
Gate open
Tj=Tj max
Tj=Tj max
Tj=Tj max
Tj=Tj max; VD=0.67.VDRM;
ITM2IT(AV);
Gate pulse: 20 V, 5 ,
1 µs rise time, 50 µs
Page 1 of 1
T143-500
Rev 26/01/2004



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T143-500 pdf
Symbols and parameters
ON-STATE
VTM
VT(TO)
rT
Peak on-state voltage
On-state threshold voltage
On-state slope resistance
IL Latching current
CHARACTERISTICS
Units Values
V 1.80
V 1.10
m0.57
mA 700
IH Holding current
BLOCKING
IDRM, IRRM
Repetitive peak off-state and
repetitive peak reverse currents
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(dVD/dt)crit
Critical rate of rise of
off-state voltage1)
TRIGGERING
VGT Gate trigger direct voltage
IGT Gate trigger direct current
VGD Gate non-trigger direct voltage
IGD Gate non-trigger direct current
SWITCHING
tgt Turn-on time
tgd Delay time
tq Turn-off time2)
Qrr
trr
THERMAL
Rthjc
Recovered charge
Reverse recovery time
Thermal resistance junction to case
mA
mA
V/µs
V
A
V
mA
µs
µs
µs
µC
µs
°C/W
300
30
200
1600
3.50
0.25
0. 5
10.0
25.0
7.0
160
250
500
1500
30.0
0.034
Conditions
Tj=25°C; ITM=3.14.ITAV
Tj=Tj max
Tj=Tj max
Tj=25°C; VD=12 V;
Gate pulse: 20 V, 5 ,
1 µs rise time, 50 µs
Tj=25°C; VD=12 V;
Gate open
Tj=Tj max;
VD=VDRM; VR=VRRM
Tj=Tj max;
VD=0.67.VDRM;
Gate open
Tj=25°C; VD=12 V;
Direct gate current
Tj=Tj max; VD=0.67.VDRM;
Direct gate current
Tj=25°C; VD=100 V; ITM=ITAV;
Gate pulse: 20 V, 5,
1 µs rise time, 50 µs
Tj=Tj max;
ITM=ITAV;
diR/dt=5 A/µs; VR=100 V;
VD=0.67 VDRM; dVD/dt=50 V/µs
Tj=Tj max; ITM=ITAV;
diR/dt=5 A/µs; VR=100 V;
Direct current, double side cooled
Note:
1) Critical rate of rise of off-state voltage
Symbol of group P2 K2 E2 A2
(dVD/dt)crit, V/µs 200 320 500 1000
OVERALL DIMENSIONS
60 max
37+- 2
3,5+0,2
h1.5+- 0.2
T1
1600
2) Turn-off time
Symbol of group
T2
M2
tq, µs
160 250
PART NUMBERING GUIDE
T 143 500 16 T1 T2
12 3 4 5 6
E2
500
N
7
37+- 2
300+- 30
4,3+0,18
2 holes
1. Thyristor
2. Design version
3. Mean on-state current, A
4. Voltage code
5. Critical rate of rise of off-state voltage
6. Group of turn-off time
7. Ambient conditions: N – normal; T – tropical
150 +- 100
Weight: 260 grams
Mounting force: 13.5 ÷ 16.5 kN
Recommended heatsink: O143; O243; O343
Page 2 of 2
T143-500
Rev 26/01/2004



Part Number T143-500
Description Phase Control Thyristor
Maker ET - ET
Total Page 3 Pages
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