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T1400TA18A

Insulared Gate Bi-polar Transistor



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T1400TA18A pdf
WESTCODE
Date:- 10 May, 2001
Data Sheet Issue:- 1
Insulated Gate Bi-polar Transistor
Type T1400TA18A
(capsule type)
Absolute Maximum Ratings
VCES
VGES
VOLTAGE RATINGS
Collector – emitter voltage (Note 1)
Peak gate – emitter voltage (Note 1)
MAXIMUM
LIMITS
1800
±20
UNITS
V
V
IC
ICRM
IF
IFRM
PMAX
Tj
Tstg
RATINGS
DC – Collector current, IGBT (Note 2)
Repetitive peak collector current, tp=1ms, IGBT (Note 2)
DC – Forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Maximum power dissipation, IGBT
Operating temperature range (Note 3)
Storage temperature range (Note 3)
Notes: -
1) Unless otherwise indicated Tj = 125ºC
2) TC = 90°C
3) For operation below –40°C or above 125°C please contact factory
MAXIMUM
LIMITS
1400
2800
1400
2800
6.6
-60 to +150
-60 to +150
UNITS
A
A
A
A
kW
°C
°C
Introduction
This rating report represents the outline specification for an Insulated gate bi-polar transistor (IGBT)
housed in a 75mm boss diameter hermetic cold weld capsule.
Data Sheet T1400TA18A Issue 1
Page 1 of 14
May, 2001



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T1400TA18A pdf
WESTCODE Positive development in power electronics
Characteristics
T1400TA18A
VCE(sat)
Vo
rs
VGE(TH)
ICES
IGES
Cies
td(on)
tr(I)
ton
Qg(on)
Eon
td(off)
tf
Qg(off)
Eoff
VF
Vo
rs
Irm
Qra
trr
R
th(j-hs)
Rth(j-hs)
F
Wt
PARAMETER
IGBT Characteristics
Collector – emitter saturation voltage
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Diode Characteristics.
Forward voltage
Threshold voltage
Slope resistance
Peak reverse recovery current
Recovered charge (50% chord)
Reverse recovery time (50% chord)
Thermal & Mechanical
Thermal impedance junction to sink,
IGBT
Thermal impedance junction to sink,
Diode
Mounting force
Weight
MIN
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
TYP MAX TEST CONDITIONS
4.1
5.3
-
-
5.5
-
0.05
150
0.85
0.3
1.85
13
280
1.6
0.75
17.0
525
4.3 IC = 1400A, VGE = 15V, Tj = 25°C
5.5 IC = 1400A, VGE = 15V
2
2.5
Current range 400A – 1400 A
7
100
±1
-
1.25
VCE = VGE, IC = 20mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
-
2.75
- IC =1400A, VCE = 0.5VCES,
- VGE = ±15V,
2.0 Rg(ON)=1
1.0 Rg(OFF)=5Ω,
-
-
2 2.4 IF = 1400A, Tj =25°C
2.1 2.5 IF = 1400A
- 1.28
- 0.87 Current range 400A – 1400 A
300 380
260 360 IF = 1400A, VGE =0V, di/dt = 600A/µs
1.4 1.8
- 15 Double side cooled
- 25 Collector side cooled
- 39 Emitter side cooled
- 35 Double side cooled
- 52 Cathode side cooled
- 104 Anode side cooled
- 30 (see note 2)
1.2 -
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) For other clamping forces, consult factory.
UNITS
V
V
V
m
V
mA
mA
nF
µs
µs
µs
µC
mJ
µs
µs
µC
mJ
V
V
V
m
A
µC
µs
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Data Sheet T1400TA18A Issue 1
Page 2 of 14
May, 2001



Part Number T1400TA18A
Description Insulared Gate Bi-polar Transistor
Maker Westcode - Westcode
Total Page 14 Pages
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