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T1329N

Phase Control Thyristor



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T1329N pdf
N Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T1329N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
PereiondinscdhaetVeonrwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
Elektrische Eigenschaftenrepetitive peak forward off-state and reverse voltages
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = -40°C... Tvj max
VDRM,VRRM
VDSM
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
www.DataSheetD4Uur.ccholmassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
ITRMSM
TC = 85 °C
TC = 70 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter F
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
1800 V
2000 V
2200 V
1800 V
2000 V
2200 V
1900 V
2100 V
2300 V
2600 A
1329 A
1655 A
26500 A
23000 A
3510 10³ A²s
2645 10³ A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie 400 A iT 6500 A
on-state characteristic
v T = A + B iT + C ln (iT + 1) + D
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
iT
Tvj = Tvj max , iT = 3 kA
Tvj = Tvj max , iT = 1 kA
Tvj = Tvj max
vT
V(TO)
Tvj = Tvj max
rT
Tvj = Tvj max
Tvj = 25 °C, vD = 12V
A=
B=
C=
D=
IGT
Tvj = 25 °C, vD = 12V
VGT
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12V
IH
Tvj = 25°C, vD = 12V, RGK 10
IL
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
DIN IEC 60747-6
tgd
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs
max.
max.
1,65 V
1,13 V
0,90 V
0,234 m
9,012E-01
1,890E-04
-2,256E-02
6,587E-03
max. 250 mA
max. 2,2 V
max.
max.
max.
10 mA
5 mA
0,25 V
max. 300 mA
max. 2000 mA
max. 200 mA
max.
4 µs
prepared by: H.Sandmann
approved by: J.Przybilla
BIP-AC / 01-10-01, M.Droldner
date of publication: 2007-08-31
revision:
1
A 24/01
Seite/page 1/10



No Preview Available !

T1329N pdf
N Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T1329N
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
circuit commutated turn-off time
Thermische EigenschaftenTvj = Tvj max, iTM = ITAVM
vRM = 100 V, vDM = 0,67 VDRM
Mechanische EigenschaftendvD/dt = 20 V/µs, -diT/dt = 10 A/µs
4.Kennbuchstabe / 4th letter O
tq
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
www.DataSheet4U.com
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, θ = 180°sin
Anode / anode, DC
Kathode / cathode, θ = 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sides
einseitig / single-sides
RthJC
RthCH
Tvj max
Tc op
Tstg
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpresskraft
clamping force
Steueranschlüsse
control terminals
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
f = 50 Hz
F
Gate
Kathode / cathode
G
typ. 300 µs
max.
max.
max.
max.
max.
max.
0,0184 °C/W
0,0170 °C/W
0,0344 °C/W
0,0330 °C/W
0,0364 °C/W
0,0350 °C/W
max.
max.
0,0025 °C/W
0,0050 °C/W
125 °C
-40...+125 °C
-40...+150 °C
Seite 3
page 3
20...45 kN
A 2,8x0,8
A 4,8x0,8
typ. 540 g
32 mm
50 m/s²
BIP-AC / 01-10-01, M.Droldner
A 24/01
Seite/page 2/10



Part Number T1329N
Description Phase Control Thyristor
Maker Infineon - Infineon
Total Page 10 Pages
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