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STMicroelectronics Electronic Components Datasheet


T1020-600W

(T1020-600W / T1030-600W) SNUBBERLESS TRIAC


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T1020-600W pdf
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T1020-600W
® T1030-600W
SNUBBERLESS TRIAC
FEATURES
s ITRMS = 10 A
s VDRM = VRRM = 600V
s EXCELLENT SWITCHING PERFORMANCES
s INSULATING VOLTAGE = 1500V(RMS)
s U.L. RECOGNIZED : E81734
A2 A1
G
DESCRIPTION
The T1020-600W and 1030-600W triacs use high
performance glass passivated chip technology,
housed in a fully molded plastic ISOWATT220AB
package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
Parameter
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t
dI/dt
I2t Value (half-cycle, 50 Hz)
Critical rate of rise of on-state current
Gate supply : IG = 500 mA dIG /dt = 1 A/µs.
Tstg Storage temperature range
Tj Operating junction temperature range
Tc= 90°C
Value
10
Unit
A
tp = 16.7 ms
(1 cycle, 60 Hz)
tp = 10 ms
(1/2 cycle, 50 Hz)
tp = 10 ms
Repetitive
F = 50 Hz
Non Repetitive
110
125
78
20
100
- 40 to + 150
- 40 to + 125
A
A2s
A/µs
°C
Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
Value
600
Unit
V
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T1020-600W / 1030-600W
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-c) Junction to case for A.C (360° conduction angle)
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 100 mW PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1020 T1030 Unit
IGT VD=12V (DC) RL=33
VGT VD=12V (DC) RL=33
Tj= 25°C
Tj= 25°C
I-II-III
I-II-III
MAX
MAX
20 30
1.5
mA
V
VGD VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG=500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH *
VTM *
IT= 100mA Gate open
ITM= 14A tp= 380µs
Tj= 25°C
Tj= 25°C
MAX
MAX
35 50
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt *
Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
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Part Number T1020-600W
Description (T1020-600W / T1030-600W) SNUBBERLESS TRIAC
Maker ST Microelectronics - ST Microelectronics
Total Page 5 Pages
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