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IXYS
IXYS


T0960VC17G

Insulated Gate Bi-Polar Transistor



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T0960VC17G pdf
Date:- 30 Nov, 2016
Data Sheet Issue:- P1
Tentative data
Insulated Gate Bi-Polar Transistor
Type T0960VC17G
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate emitter voltage
MAXIMUM
LIMITS
1700
900
±20
UNITS
V
V
V
IC
ICRM
IF(DC)
IFRM
IFSM
IFSM2
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Continuous DC forward current, Diode
Repetitive peak forward current, tp=1ms, Diode
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)
Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 150nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM
LIMITS
960
1920
960
1920
5635
6200
2.96
6000
-40 to +125
-40 to +125
UNITS
A
A
A
A
A
A
kW
A/µs
°C
°C
Tentative Data Sheet T0960VC17G Issue P1
Page 1 of 5
November, 2016



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T0960VC17G pdf
Characteristics
Insulated Gate Bi-polar Transistor Type T0960VC17G
IGBT Characteristics
PARAMETER
VCE(sat) Collector emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.36
3.0
-
-
5
5.5
-
75
0.32
0.84
4.2
0.47
2.1
0.55
2.4
0.8
2400
MAX
2.65
3.3
1.22
2.17
-
15
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 960A, VGE = 15V, Tj = 25°C
IC = 960A, VGE = 15V
Current range: 320A 960A
VCE = VGE, IC = 32mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =960A, VCE =900V, di/dt=5000A/µs
VGE = ±15V, Ls=120nH
Rg(ON)= 2Rg(OFF)=15CGE=120nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=900V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
1.95
2.05
-
-
540
310
0.6
0.18
MAX
2.25
2.35
1.37
1.02
-
-
-
-
TEST CONDITIONS
IF = 960A, Tj =25°C
IF = 960A
Current range 320A - 960A
IF = 960A, Vr = 900V, VGE = -15V,
di/dt=5000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
RthJK Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
11
-
TYP
-
-
-
-
-
-
-
0.65
MAX
33.8
51.8
96.9
36.1
55.6
104
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Tentative Data Sheet T0960VC17G Issue P1
Page 2 of 5
November, 2016



Part Number T0960VC17G
Description Insulated Gate Bi-Polar Transistor
Maker IXYS - IXYS
Total Page 5 Pages
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