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IXYS
IXYS


T0800TB45E

Insulated Gate Bi-Polar Transistor



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T0800TB45E pdf
WESTCODE
An IXYS Company
Date:- 14 July, 2011
Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor
Type T0800TB45E
Absolute Maximum Ratings
VCES
VDC link
VGES
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
4500
2800
±20
UNITS
V
V
V
IC(DC)
ICRM
IECO
PMAX
(di/dt)cr
Tj
Tstg
RATINGS
DC collector current, IGBT
Repetitive peak collector current, tp=1ms, IGBT
Maximum reverse emitter current, tp=100µs, (note 2 & 3)
Maximum power dissipation, IGBT (Note 2)
Critical diode di/dt (note 3)
Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM
LIMITS
800
1600
800
6.4
1500
-40 to +125
-40 to +125
UNITS
A
A
A
KW
A/µs
°C
°C
Tentative Data Sheet T0800TB45E Issue P1
Page 1 of 6
July, 2011



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T0800TB45E pdf
WESTCODE An IXYS Company
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Insulated Gate Bi-polar Transistor Type T0800TB45E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.5
-
-
5.3
10
-
135
2
4
5
7
4.5
2.1
9
4.3
2500
MAX
3.2
3.9
1.71
2.74
-
35
±10
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V
Current range: 265 – 800A
VCE = VGE, IC = 85mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =800A, VCE =2800V, di/dt=1500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 8.2Ω, Rg(OFF)=8.2Ω, CGE=68nF
Freewheel diode type E0900NC45C at
Tj=125°C.
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
15
-
TYP
-
-
-
-
1.2
MAX
15.6
25.6
40.6
25
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
UNITS
K/kW
K/kW
K/kW
kN
kg
Tentative Data Sheet T0800TB45E Issue P1
Page 2 of 6
July, 2011



Part Number T0800TB45E
Description Insulated Gate Bi-Polar Transistor
Maker IXYS - IXYS
Total Page 6 Pages
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