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Vishay Intertechnology Electronic Components Datasheet


SB20H200CT-1

Dual Common-Cathode High-Voltage Schottky Rectifier



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SB20H200CT-1 pdf
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay Generawl wSwe.DmataicShoenetd4Uu.ccotmor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
TO-220AB
ITO-220AB
123
MBR20H200CT
3
12
MBRF20H200CT
TO-262AA
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1 23
SB20H200CT-1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
2 x 10 A
200 V
290 A
0.75 V
175 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
Maximum DC blocking voltage
VRWM
VDC
Maximum average forward rectified current
total device
per diode
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩ
IRRM
ERSM
EAS
VC
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute
dV/dt
TJ, TSTG
VAC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10 000
- 65 to + 175
1500
Document Number: 88786 For technical questions within your region, please contact one of the following:
Revision: 18-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/µs
°C
V
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SB20H200CT-1 pdf
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST
SYMBOL
TYP.
Maximum instantaneous
forward voltage per diode (1)
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.81
0.65
0.87
0.74
Maximum reverse current per
diode at working peak reverse
voltage (1)
TJ = 25 °C
TJ = 125 °C
IR
5.0
1.0
Typical junction capacitance
Note:
4.0 V, 1 MHz
CJ
250
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
0.88
0.75
0.97
0.85
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
Typical thermal resistance per diode
RθJC
2.0
MBRF
4.0
SB
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR20H200CT-E3/45
2.06
ITO-220AB
MBRF20H200CT-E3/45
2.20
TO-262AA
SB20H200CT-1E3/45
1.58
PACKAGE CODE
45
45
45
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
MBR, MBRB
20
MBRF
15
10
5
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Derating Curve (Total)
350
325
300
275
250
225
200
175
150
125
100
75
50
25
0
1
10
Number of Cycles at 60 Hz
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 88786
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 18-Apr-08



Part Number SB20H200CT-1
Description Dual Common-Cathode High-Voltage Schottky Rectifier
Maker Vishay Siliconix - Vishay Siliconix
Total Page 5 Pages
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