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Vishay Intertechnology Electronic Components Datasheet


S886T

MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage


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S886T pdf
S886T/S886TR
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 12 V Supply
Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 12 V supply voltage.
Electrostatic sensitive device.
Observe precautions for handling.
C block
AGC
G2
RF in
G1
C block
RFC
D
S C block
VDD
RF out
94 9296
Features
D Integrated gate protection diodes
D Low noise figure
D High gain
D Biasing network on chip
21
D Improved cross modulation at gain reduction
D High AGC-range
D SMD package
12
94 9279
13 579
34
S886T Marking: 982
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
94 9278
43
95 10831
S886TR Marking: 82R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
16
30
10
7.5
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthChA
Value
450
Unit
K/W
Document Number 85057
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (8)



No Preview Available !

S886T pdf
S886T/S886TR
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
+VG1S = 6 V, VG2S = VDS = 0
–VG1S = 6 V, VG2S = VDS = 0
±VG2S = 6 V, VG1S = VDS = 0
Drain current
Self-biased
operating current
VDS = 12 V, VG1S = 0, VG2S = 6 V
VDS = 12 V, VG1S = nc, VG2S = 6 V
Gate 2 - source
cut-off voltage
VDS = 12 V, VG1S = nc, ID = 200 mA
Symbol Min Typ Max Unit
±V(BR)G1SS 8
12 V
±V(BR)G2SS 8
12 V
+IG1SS
–IG1SS
±IG2SS
60 mA
120 mA
20 nA
IDSS
IDSP
50 500 mA
8 12 16 mA
VG2S(OFF)
1.0
V
Electrical AC Characteristics
VDS = 12 V, VG2S = 6 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
Test Conditions
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
VDS = 12 V, VG2S = 1 to 6 V, f = 800 MHz
GS = 2 mS, GL = 0.5 mS, f = 200 MHz
GS = 3,3 mS, GL = 1 mS, f = 800 MHz
Symbol Min Typ Max Unit
y21s25 30 35 mS
Cissg1
2.3 2.7 pF
Crss 20 fF
Coss
0.9 pF
Gps 27 dB
Gps 17.5 22
DGps 45
dB
dB
F 1 dB
F 1.3 dB
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with VG1S
Using open collector switching
< 0.7 V is
transistor
feasible.
(inside of
PLL),
insert
10
kW
collector
resistor.
www.vishay.de FaxBack +1-408-970-5600
2 (8)
Document Number 85057
Rev. 3, 20-Jan-99



Part Number S886T
Description MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage
Maker Vishay Telefunken - Vishay Telefunken
Total Page 8 Pages
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