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Vishay Intertechnology Electronic Components Datasheet


S852TF

Silicon NPN Planar RF Transistor



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Silicon NPN Planar RF Transistor
S852TF
Vishay Semiconductors
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages.
In addition to space savings, the SOT-490 provides a
higher level of reliability than other 3-pin packages,
such as more resistance to moisture.
1
23
16867
Electrostatic sensitive device.
Observe precautions for handling.
Due to the short length of its leads the SOT-490 is
also reducing package inductances resulting in some
better electrical performance. All of these aspects
make this device an ideal choice for demanding RF
applications.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
• Low supply voltage
• Low current consumption
• Low noise figure
e3
• 50 Ω input impedance at 945 MHz
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Typ: S852TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
S852TF
Marking
52
SOT-490
Package
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Tamb 125 °C
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
12
6
2
8
30
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85104
Rev. 1.3, 02-May-05
www.vishay.com
1



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S852TF pdf
S852TF
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Symbol
RthJA
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 12 V, VBE = 0
Collector-base cut-off current VCB = 8 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
Symbol
ICES
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
Min
6
40
Value
450
Typ.
0.1
90
Unit
K/W
Max Unit
100 μA
100 nA
1 μA
V
0.4 V
150
www.vishay.com
2
Document Number 85104
Rev. 1.3, 02-May-05



Part Number S852TF
Description Silicon NPN Planar RF Transistor
Maker Vishay Siliconix - Vishay Siliconix
Total Page 4 Pages
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