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Vishay Intertechnology Electronic Components Datasheet


S822T

Silicon NPN Planar RF Transistor



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S822T pdf
S822T/S822TW/S822TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Observe precautions for handling.
Electrostatic sensitive device.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Features
D Low supply voltage
D Low current consumption
WD 50 input impedance at 945 MHz
D Low noise figure
D High power gain
21
21
94 9279
13 579
34
S822T Marking: 822
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
12
13 653
34
13 566
S822TW Marking: W22
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 654
13 566
43
S822TRW Marking: WSF
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85050
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (8)



No Preview Available !

S822T pdf
S822T/S822TW/S822TRW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 125 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 12 V, VBE = 0
Collector-base cut-off current
VCB = 8 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 3 V, IC = 1 mA
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
12
6
2
8
30
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Symbol
RthJA
Value
450
Unit
K/W
Symbol Min Typ Max Unit
mICES
100 A
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 6
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for fT max
Real part of input impedance
Test Conditions
VCE = 3 V, IC = 1 mA, f = 500 MHz
VCE = 2 V, IC = 1.5 mA, f = 500 MHz
VCB = 1 V, f = 1 MHz
ZS = ZSopt, f = 450 MHz, VCE =
2 V, IC = 0.5 mA
ZS = ZSopt, f = 945 MHz, VCE =
3 V, IC = 1 mA
ZS = ZSopt, f = 945 MHz, VCE =
2 V, IC = 1.5 mA
VCE = 2 V, IC = 0.5 mA, f = 450MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
VCE = 2 V, f = 500 MHz
VCE = 3 V, IC = 1 mA, f = 945 MHz
VCE = 2 V, IC = 1.5 mA, f = 945 MHz
Symbol
fT
Ccb
Min Typ Max Unit
4.7 GHz
5.2 GHz
0.2 pF
1.1 dB
Fopt
Gpe @Fopt
IC
Re(h11e)
1.8
2
13.5
12.5
14.0
3
50
50
dB
dB
dB
dB
dB
mA
W
W
www.vishay.de FaxBack +1-408-970-5600
2 (8)
Document Number 85050
Rev. 3, 20-Jan-99



Part Number S822T
Description Silicon NPN Planar RF Transistor
Maker Vishay Telefunken - Vishay Telefunken
Total Page 8 Pages
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