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Vishay Intertechnology Electronic Components Datasheet


S504TR

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage



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S504TR pdf
S504T/S504TR/S504TRW
Vishay Telefunken
MOSMIC® for TV–Tuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Features
D Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D High AGC-range with less steep slope
D Integrated gate protection diodes
C block
AGC
G2
C block
RF in
G1
VDD
RG1
RFC
D
S C block
VDD
RF out
13650
D Low noise figure
D High gain
D Improved cross modulation at gain reduction
D SMD package
21
12
94 9279
13 579
34
S504T Marking: 504
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
12
94 9278
43
95 10831
S504TR Marking: 54R
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
13 654
13 566
43
S504TRW Marking: W04
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85043
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)



No Preview Available !

S504TR pdf
S504T/S504TR/S504TRW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VDS
ID
±IG1/G2SM
±VG1/G2SM
Ptot
TCh
Tstg
Value
8
30
10
6
200
150
–55 to +150
Unit
V
mA
mA
V
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Symbol
RthChA
Value
450
Unit
K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Drain - source
mID = 10 A, VG2S = VG1S = 0
breakdown voltage
Gate 1 - source
±IG1S = 10 mA, VG2S = VDS = 0
breakdown voltage
Gate 2 - source
±IG2S = 10 mA, VG1S = VDS = 0
breakdown voltage
Gate 1 - source
leakage current
+VG1S = 5 V, VG2S = VDS = 0
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
±VG2S = 5 V, VG1S = VDS = 0
WVDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 220 k
mVDS = 5 V, VG2S = 4 V, ID = 20 A
W mVDS = VRG1 = 5 V, RG1 = 220 k , ID = 20 A
Symbol Min Typ Max Unit
V(BR)DSS 15
V
±V(BR)G1SS 7
10 V
±V(BR)G2SS 7
10 V
+IG1SS
20 nA
±IG2SS
20 nA
IDSO
7 10 14 mA
VG1S(OFF) 0.4
1.0 V
VG2S(OFF)
1.0
V
Remark on driving the MOSMIC and improving intermodulation behavior:
W WSet RG1 = 220 k for driving MOSMIC near typical value of IDSO = 10 mA.By setting RG1 = 150 k typical value
of IDSO will raise up to 15 mA and improved intermodulation behavior will be performed.
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 85043
Rev. 3, 20-Jan-99



Part Number S504TR
Description MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage
Maker Vishay Telefunken - Vishay Telefunken
Total Page 5 Pages
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