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Vishay Intertechnology Electronic Components Datasheet


S503TXRW

MOSMIC



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S503TXRW pdf
VISHAY
S503TX/S503TXR/S503TXRW
Vishay Semiconductors
MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Features
• Easy Gate 1 switch-off with PNP switching transis-
tors inside PLL
www.DataSheet4U.comHigh AGC-range with less steep slope
• Integrated gate protection diodes
• Low noise figure
• High gain, very high forward transadmittance
(40 mS typ.)
• Improved cross modulation at gain reduction
• SMD package
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
21
SOT-143
34
12
SOT-143R
4
1
3
2
SOT-343R
43
19216
Electrostatic sensitive device.
Observe precautions for handling.
Typical Application
C block
AGC
G2
C block
G1
RF in
VGG
(VRG1)
RG1
RFC
D
S C block
VDD(VDS)
RF out
13650
Mechanical Data
Typ: S503TX
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S503TXR
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S503TXRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Parts Table
S503TX
Part
S503TXR
S503TXRW
X03
X8R
WX8
Marking
SOT-143
SOT-143R
SOT-343R
Package
Document Number 85078
Rev. 1.2, 30-Aug-04
www.vishay.com
1



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S503TXRW pdf
S503TX/S503TXR/S503TXRW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
Gate 2 - source voltage
Total power dissipation
www.DataShCeheat4nUn.eclotmemperature
Storage temperature range
Tamb 60 °C
Symbol
VDS
ID
± IG1/G2SM
+ VG1S
- VG1S
± VG2SM
Ptot
TCh
Tstg
Maximum Thermal Resistance
Parameter
Channel ambient
Test condition
1)
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Symbol
RthChA
Value
8
30
10
6
1.5
6
200
150
- 55 to + 150
Value
450
VISHAY
Unit
V
mA
mA
V
V
V
mW
°C
°C
Unit
K/W
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Drain - source breakdown
voltage
ID = 10 µA, VG1S = VG2S = 0
V(BR)DSS
12
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS
7
10
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
7
10
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
20
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
IDSO
10
15
20
RG1 = 56 k
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF)
0.3
1.3
Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 = 56 k, VG2S(OFF)
0.8
1.0
1.4
ID = 20 µA
Remark on improving intermodulation behavior:
By setting RG1 smaller than 56 k, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Unit
V
V
V
nA
nA
mA
V
V
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz
Parameter
Test condition
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Symbol
Min
Typ.
Max
Unit
|y21s|
35
40
50 mS
Cissg1
2.3 2.8 pF
Crss 30 40 fF
Coss
1.4
pF
www.vishay.com
2
Document Number 85078
Rev. 1.2, 30-Aug-04



Part Number S503TXRW
Description MOSMIC
Maker Vishay Siliconix - Vishay Siliconix
Total Page 5 Pages
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