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Vishay Intertechnology Electronic Components Datasheet


S392D-G

RF PIN Diodes



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S392D-G pdf
www.vishay.com
S392D-G
Vishay Semiconductors
RF PIN Diodes - Dual Series
3
12
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Base P/N-HG3 - green, automotive grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
S392D-G
ORDERING CODE
S392D-HG3-08
TYPE MARKING
PH4
INTERNAL
CONSTRUCTION
Dual series
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward continuous current
VR 30
IF 50
UNIT
V
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Storage temperature range
Operating temperature range
Tj
Tstg
Top
VALUE
500
125
- 55 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
IF = 20 mA
VR = 30 V
f = 100 MHz, VR = 0 V
f = 100 MHz, IF = 1.5 mA
f = 100 MHz, VR = 0 V
IF = 10 mA, IR = 10 mA
S392D-G
VF
IR
CD
rf
zr
40
5
TYP.
4
MAX.
1
0.05
0.5
60
UNIT
V
μA
pF
k
μs
Rev. 1.2, 25-Feb-13
1 Document Number: 83320
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

S392D-G pdf
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
S392D-G
Vishay Semiconductors
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4 0.8 1.2 1.6
VF - Forward Voltage (V)
2.0
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
22113
1
0.001
0.01 0.1
1
10
IF - Forward Current (mA)
100
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
0 V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0 20 40 60 80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.2, 25-Feb-13
2 Document Number: 83320
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Part Number S392D-G
Description RF PIN Diodes
Maker Vishay - Vishay
Total Page 4 Pages
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