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R0964LS12E

Power Thyristor



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R0964LS12E pdf
Technical Data :
Page1 of 3
R0964LS12E
- Power Thyristor
1200 VDRM;
**********************************************************************************************************
HIGH POWER THYRISTOR FOR INVERTER AND CHOPPER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 1200 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device
Type
VRRM (1) VDRM (1) VRSM (1)
R0964LS12E 1200
1200
1300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
(4)
IRRM / IDRM
dV/dt
70 mA (3)
200 V/µsec
Conducting - on state
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Parameter
Average value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol Min.
IT(AV)
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max.
Typ.
622
9400
442000
1000
500
1.96
200
100
Units Conditions
Sinewave,180o conduction,Tsink=85oC
A
A2s
mA
mA
V
A/µs
A/µs
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM = 1400 A; Duty cPSTCle 0.01%
Tj = 125 oC
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V



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R0964LS12E pdf
Technical Data :
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol
PGM
PG(AV)
Min.
Max. Typ.
200
5
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
400
200
150
5
3
0.25
Peak negative voltage
VGRM
5
Page 2 of 3
R0964LS12E - Power Thyristor
Units
W
W
Conditions
tp = 40 us
A
mA
mA
mA
V
V
V
V
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = +25 oC
VD = 6 V;RL = 3 ohms;Tj = +125oC
VD = 6 V;RL = 3 ohms;Tj = -40 oC
VD = 6 V;RL = 3 ohms;Tj = 0-125oC
VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbol Min.
td
tq 20
Qrr
Max. Typ. Units Conditions
1.5 0.5 µs
30 µs
ITM = 500 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
ITM = 1000 A; di/dt = 60 A/µs;
VR -50 V; Re-applied dV/dt = 200
V/µs linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle 0.01%
*180
µC ITM = 1000 A; di/dt = 60 A/µs;
VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
Units
oC
oC
Conditions
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
RΘ (j-c)
RΘ (c-s)
P
W
3000
13.3
0.040
0.080
0.015
0.030
3500
15.5
oC/W
oC/W
lb.
kN
Double sided cooled
Single sided cooled
Double sided cooled *
Single sided cooled *
270 g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data



Part Number R0964LS12E
Description Power Thyristor
Maker ETC - ETC
Total Page 3 Pages
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