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IXYS
IXYS


R0809LC10C

Distributed Gate Thyristor



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R0809LC10C pdf
Date:- 01 August 2012
Data Sheet Issue:- 2
Distributed Gate Thyristor
Type R0809LC10x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1000
1000
1000
1100
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
809
504
271
1691
1260
8000
8800
320×103
387×103
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Type R0809LC10x Issue 2
Page 1 of 12
August, 2012



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R0809LC10C pdf
Characteristics
R0809LC10x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
12
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.52 ITM=1400A
- 2.1
- 0.3
- - VD=80% VDRM
- 70 Rated VDRM
- 70 Rated VRRM
- 3.0 Tj=25°C
- 300 Tj=25°C
VD=10V, IT=3A
- 1000 Tj=25°C
0.5 1.0 VD=67% VDRM, ITM=1500A, di/dt=60A/µs,
0.9 2.0 IFG=2A, tr=0.5µs, Tj=25°C
- 140
- 60 ITM=1000A, tp=1000µs, di/dt=60A/µs,
- 80 Vr=50V
- 2.0
-
15
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
-
20
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
- 0.032 Double side cooled
- 0.064 Single side cooled
- 20
340 -
UNITS
V
V
m
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R0809LC10x Issue 2
Page 2 of 12
August, 2012



Part Number R0809LC10C
Description Distributed Gate Thyristor
Maker IXYS - IXYS
Total Page 12 Pages
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