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IXYS
IXYS


R0633YC10F

Distributed Gate Thyristor



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R0633YC10F pdf
Date:- 14 Jul, 2015
Data Sheet Issue:- 4
Distributed Gate Thyristor
Types R0633YC10x to R0633YC12x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200
1200
1200
1300
UNITS
V
V
V
V
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
diT/dt
VRGM
PG(AV)
PGM
VGD
THS
Tstg
OTHER RATINGS
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Mean on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
7) Rated VDRM.
MAXIMUM
LIMITS
633
423
246
1268
1054
6.3
6.9
200×103
240×103
500
1000
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
°C
°C
Data Sheet. Type R0633YC12x Issue 4
Page 1 of 12
July, 2015



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R0633YC10F pdf
Characteristics
Distributed Gate Thyristor R0633YC12x
PARAMETER
VTM
V0
rS
dv/dt
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
20
-
-
5.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
125
85
65
2.25
-
-
-
-
-
90
1.85 ITM=1000A
1.25
0.614
-
60
60
3.0
200
1000
-
VD=80% VDRM, linear ramp
Rated VDRM
Rated VRRM
Tj=25°C
Tj=25°C
VD=10V, IT=3A
Tj=25°C
100
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
-
-
28
30
0.050
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.10 Single side cooled
10
-
V
V
m
V/µs
mA
mA
V
mA
mA
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Introduction
The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative,
interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current,
medium frequency applications.
Data Sheet. Type R0633YC12x Issue 4
Page 2 of 12
July, 2015



Part Number R0633YC10F
Description Distributed Gate Thyristor
Maker IXYS - IXYS
Total Page 12 Pages
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