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IXYS
IXYS


R0472YC16F

Distributed Gate Thyristor



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R0472YC16F pdf
Date:- 23 Oct 2014
Data Sheet Issue:- 2
Distributed Gate Thyristor
Types R0472YC12x to R0472YC16x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
1200 -1600
1200 -1600
1200 -1600
1300 - 1700
UNITS
V
V
V
V
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
OTHER RATINGS
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Critical rate of rise of on-state current (repetitive), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
472
316
185
945
789
4300
4700
92.5×103
110.5×103
500
1000
5
2
30
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
A/µs
V
W
W
°C
°C
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 1 of 12
October, 2014



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R0472YC16F pdf
Characteristics
Distributed Gate Thyristor types R0472YC12x to R0472YC16x
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
20
25
-
-
5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.80 ITM=1000A
V
- 3.24 ITM=1416A
V
- 1.648
V
- 1.125
m
- - VD=80% VDRM, Linear ramp, Gate o/c
V/s
- 60 Rated VDRM
mA
- 60 Rated VRRM
mA
- 3.0
Tj=25°C
- 200
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
V
- 1000 Tj=25°C
mA
0.4 1.0 VD=67% VDRM, ITM=2000A, di/dt=60A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
155 175
µC
70 -
µC
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
60 -
A
2.5 -
µs
-
-
25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
30
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.05 Double side cooled
K/W
- 0.10 Single side cooled
K/W
-9
kN
90 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R0472YC12x to R0472YC16x Issue 2
Page 2 of 12
October, 2014



Part Number R0472YC16F
Description Distributed Gate Thyristor
Maker IXYS - IXYS
Total Page 12 Pages
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