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ETC
ETC


Q2N2222

Aplifier Transistors



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Q2N2222 pdf
Q2N2222
okDatasheet.com
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RqJA
RqJC
Value
40
75
6.0
600
625
5.0
1.5
12
–55 to +150
Max
200
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
1
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
www.DataSChoeleletc4tUor.coEmmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
40
75
6.0
— Vdc
— Vdc
— Vdc
10 nAdc
µAdc
0.01
10
10 nAdc
10 nAdc
20 nAdc
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Q2N2222



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Q2N2222 pdf
Q2N2222
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Current–Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
hre
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
www.DataShe(IeCt4=U1.0commAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
hoe
rbCc
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
NF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
tr
ts
tf
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Min
35
50
75
35
100
50
40
0.6
300
2.0
0.25
50
75
5.0
25
Max Unit
300
Vdc
0.3
1.0
Vdc
1.2
2.0
— MHz
8.0 pF
25 pF
8.0
1.25
8.0
4.0
300
375
35
200
150
k
X 10–4
mmhos
ps
4.0 dB
10 ns
25 ns
225 ns
60 ns
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Part Number Q2N2222
Description Aplifier Transistors
Maker ETC - ETC
Total Page 6 Pages
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