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Teccor Electronics
Teccor Electronics


Q2010LT

Internally Triggered Triacs (4 A to 15 A)



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Q2010LT pdf
U.L. REFCileO#GE7N16IZ39ED
TO-220
Isolated
MT2
MT1
T
Internally Triggered Triacs (4 A to 15 A)
E3
General Description
Teccor’s Quadrac devices are triacs that include a diac trigger
mounted inside the same package. This device, developed by
Teccor, saves the user the expense and assembly time of buying
a discrete diac and assembling in conjunction with a gated triac.
Also, the alternistor Quadrac device (QxxxxLTH) eliminates the
need for a snubber network.
The Quadrac device is a bidirectional AC switch and is gate con-
trolled for either polarity of main terminal voltage. Its primary pur-
pose is for AC switching and phase control applications such as
speed controls, temperature modulation controls, and lighting
controls where noise immunity is required.
Triac current capacities range from 4 A to 15 A with voltage
ranges from 200 V to 600 V. Quadrac devices are available in the
TO-220 package.
The TO-220 package is electrically isolated to 2500 V rms from
the leads to mounting surface. 4000 V rms is available on special
order. This means that no external isolation is required, thus
eliminating the need for separate insulators and insulator-mount-
ing steps and saving dollars over “hot tab” devices.
All Teccor triac and diac chips have glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Variations of devices in this data sheet are available for custom
design applications. Consult the factory for more information.
Features
• Glass-passivated junctions
• Electrically-isolated package
• Internal trigger diac
• High surge capability — up to 200 A
• High voltage capability — 200 V to 600 V
©2002 Teccor Electronics
Thyristor Product Catalog
E3 - 1
http://www.teccor.com
+1 972-580-7777



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Q2010LT pdf
Quadrac
IT(RMS)
(5)
Part No.
Isolated
VDRM
(1)
IDRM
(1) (10)
Data Sheets
VTM
(1) (3)
Trigger Diac Specifications (T–MT1)
DVBO
VBO
[DV± ]
IBO
CT
(7) (6) (6)
(11)
MT1 T
MT2
TO-220
See “Package Dimensions” section
for variations. (12)
Q2004LT
4 A Q4004LT
Q6004LT
Q2006LT
Q4006LT
6 A Q6006LT
Q4006LTH
Q6006LTH
Q2008LT
Q4008LT
8 A Q6008LT
Q4008LTH
Q6008LTH
Q2010LT
Q4010LT
10 A
Q6010LT
Q4010LTH
Q6010LTH
Q2015LT
Q4015LT
15 A
Q6015LT
Q4015LTH
Q6015LTH
Volts
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
TC =
25 °C
mAmps
TC =
100 °C
TC =
125 °C
MAX
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
0.05 0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Volts
TC = 25 °C
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
Volts
Volts
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
MIN MAX
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
33 43
Volts
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
µAmps µFarads
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Specific Test Conditions
[DV±] — Dynamic breakback voltage (forward and reverse)
DVBO — Breakover voltage symmetry
CT — Trigger firing capacitance
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IBO — Peak breakover current
IDRM — Peak off-state current gate open; VDRM = maximum rated value
IGTM — Peak gate trigger current (10 µs Max)
IH — Holding current; gate open
IT(RMS) — RMS on-state current, conduction angle of 360°
ITSM — Peak one-cycle surge
tgt — Gate controlled turn-on time
VBO — Breakover voltage (forward and reverse)
VDRM — Repetitive peak blocking voltage
VTM — Peak on-state voltage at maximum rated RMS current
General Notes
• All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25 °C unless otherwise specified.
• Operating temperature range (TJ) is -40 °C to +125 °C.
• Storage temperature range (TS) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum; ³1/16" (1.59 mm) from case.
• The case temperature (TC) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1
(2) See Figure E3.1 for IH versus TC.
(3) See Figure E3.4 and Figure E3.5 for iT versus vT.
(4) See Figure E3.9 for surge ratings with specific durations.
http://www.teccor.com
+1 972-580-7777
E3 - 2
©2002 Teccor Electronics
Thyristor Product Catalog



Part Number Q2010LT
Description Internally Triggered Triacs (4 A to 15 A)
Maker Teccor Electronics - Teccor Electronics
Total Page 6 Pages
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