http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




UNIKC
UNIKC


P0903BVA

N-Channel Enhancement Mode MOSFET



No Preview Available !

P0903BVA pdf
P0903BVA
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
13A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
13
10
80
30
Avalanche Energy
L =0.1mH
EAS
45
Power Dissipation
TA= 25 °C
TA =70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.3
1.5
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
55
Junction-to-Case
RqJC
3.7
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design
UNITS
°C / W
REV 1.0
1 2014/9/12



No Preview Available !

P0903BVA pdf
P0903BVA
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
30
1
80
1.7 3
±100
1
10
V
nA
mA
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 13A
VGS = 10V, ID = 13A
VDS = 5V, ID = 13A
11.2 13
79
47
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V,f = 1MHz
1570
202
158
1.4
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 0.5V(BR)DSS, ID = 13A
31
16
5.5
Gate-Drain Charge2
Qgd
8
Turn-On Delay Time2
td(on)
10.8
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,RL = 1.5Ω,
ID @ 13A,VGS = 10V, RGEN = 6Ω
16.8
38.4
Fall Time2
tf
19.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 13A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 13A, dl/dt = 100A / μS
15
4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
13
1.3
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/12



Part Number P0903BVA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
PDF Download
P0903BVA pdf
Download PDF File
P0903BVA pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
P0903BD N-Channel Enhancement Mode MOSFET P0903BD
UNIKC
PDF
P0903BDA N-Channel Enhancement Mode MOSFET P0903BDA
UNIKC
PDF
P0903BDB N-Channel Enhancement Mode MOSFET P0903BDB
UNIKC
PDF
P0903BDG N-Channel Enhancement Mode MOSFET P0903BDG
UNIKC
PDF
P0903BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG
Niko
PDF
P0903BDL N-Channel Enhancement Mode MOSFET P0903BDL
UNIKC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components