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UNIKC
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P0903BT

N-Channel Enhancement Mode MOSFET



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P0903BT pdf
P0903BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.7mΩ @VGS = 10V
ID
60A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current 1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 0.1mH
ID
IDM
IAS
EAS
60
38
240
34
58
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
56
22
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowe.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.2 °C / W
Ver 1.0
1 2012/4/16



No Preview Available !

P0903BT pdf
P0903BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
1.0 1.9 3.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V , TC = 25 °C
VDS = 20V, VGS = 0V , TC = 125 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
14 16
8.0 9.7
Forward Transconductance1
gfs
VDS = 20V, ID = 20A
37
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 15V, VGS = 10V, ID = 20A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V, ID = 20A, RG = 6Ω
Fall Time2
tf
1150
304
175
25
5
8
25
23
35
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
23
12
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
60
1.3
UNIT
V
nA
mA
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0903BT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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