http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Niko
Niko


P0903BSG

N-Channel Logic Level Enhancement Mode Field Effect Transistor



No Preview Available !

P0903BSG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BSG
TO-263 (D2PAK)
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 9.5mΩ
ID
50A
G
S
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
50
35
200
40
250
8.6
50
30
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.6
MAXIMUM
2.5
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
LIMITS
MIN TYP MAX
UNIT
25
1 1.6
3
V
±250 nA
25
250 µA
1 Jun-29-2004



No Preview Available !

P0903BSG pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BSG
TO-263 (D2PAK)
Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 25A
VDS = 10V, ID = 25A
50 A
11 16
mΩ
7.5 9.5
32 S
DYNAMIC
www.DataSheIentp4Uut.cComapacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VDS = 10V, VGS = 10V,
ID = 25A
VDS = 15V, RL = 1Ω
ID 50A, VGS = 10V, RGEN = 24Ω
1200 1800
600 1000
350 500
25 50
15
10
6 16
120 250
40 90
105 200
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IS = 25A, VGS = 0V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = IS, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
50
150
0.9 1.3
70
200
0.043
A
V
nS
A
µC
REMARK: THE PRODUCT MARKED WITH “P0903BSG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 Jun-29-2004



Part Number P0903BSG
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker Niko - Niko
Total Page 5 Pages
PDF Download
P0903BSG pdf
Download PDF File
P0903BSG pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
P0903BD N-Channel Enhancement Mode MOSFET P0903BD
UNIKC
PDF
P0903BDA N-Channel Enhancement Mode MOSFET P0903BDA
UNIKC
PDF
P0903BDB N-Channel Enhancement Mode MOSFET P0903BDB
UNIKC
PDF
P0903BDG N-Channel Enhancement Mode MOSFET P0903BDG
UNIKC
PDF
P0903BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG
Niko
PDF
P0903BDL N-Channel Enhancement Mode MOSFET P0903BDL
UNIKC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components