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UNIKC
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P0903BKA

N-Channel Enhancement Mode MOSFET


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P0903BKA pdf
P0903BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
49A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
49
ID 31
IDM 120
Continuous Drain Current
TA = 25 °C
TA = 70 °C
12
ID 7.8
Avalanche Current
IAS 31
Avalanche Energy
L = 0.1mH
EAS 48
Power Dissipation
TC = 25 °C
TC = 100 °C
35
PD 14
Power Dissipation
TA = 25 °C
TA = 70 °C
2.2
PD 1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
Steady-State
Junction-to-Ambient2
Steady-State
1Pulse width limited by maximum junction temperature.
RqJC
RqJA
3.5
°C / W
55
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is 25A.
REV 1.0 1 2014/7/1



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P0903BKA pdf
P0903BKA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.6 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
10 13
6.7 9
54
DYNAMIC
Input Capacitance
Ciss
1540
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
191
Reverse Transfer Capacitance
Crss
150
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 20A,
VGS = 10V
VDS = 15V, ID @ 10A,
VGS=10V, RGEN= 6Ω
31
15
5.6
8.4
29
31
35
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
49
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20 A, dlF/dt = 100A /μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
17.6
6
2Independent of operating temperature.
3Package limitation current is 25A.
UNIT
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0 2 2014/7/1



Part Number P0903BKA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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