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P0903BIS

N-Channel Enhancement Mode MOSFET



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P0903BIS pdf
P0903BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5Ω @VGS = 10V
ID
57A
TO-251(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
57
36
160
Avalanche Current
IAS 36
Avalanche Energy
L = 0.1mH
EAS
67
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
55
21
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.3 °C / W
REV 1.0
1 2014/8/18



No Preview Available !

P0903BIS pdf
P0903BIS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
25
1 1.6 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 5V, ID = 20A
VGS = 10V, ID = 20A
12 19
7.2 9.5
Forward Transconductance1
gfs
VDS = 15V, ID = 20A
37
DYNAMIC
Input Capacitance
Ciss
1030
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
262
Reverse Transfer Capacitance
Crss
213
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 20A
VDS = 12.5V, ID @ 20A,
VGS = 10V, RGEN =6Ω
25
15
4.2
8.7
17
22
77
46
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
57
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
21
7
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/8/18



Part Number P0903BIS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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