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P0903BDL

N-Channel Enhancement Mode MOSFET


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P0903BDL pdf
P0903BDL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID
56A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
56
35
160
Avalanche Current
IAS 34
Avalanche Energy
L = 0.1mH
EAS
60
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
49
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
63
UNITS
°C / W
Ver 1.1
1 2013-3-15



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P0903BDL pdf
P0903BDL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
25
1.0 1.6 3.0
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 20A
VGS = 10V, ID = 25A
VDS = 15V, ID = 20A
12 19
7 9.5
60
DYNAMIC
Input Capacitance
Ciss
1400
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
300
Reverse Transfer Capacitance
Crss
190
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 10V)
Qg(VGS = 5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 25A
VDS = 15V, RL = 15Ω
ID @ 1A, VGS = 10V, RGEN = 6Ω
25
11
6
5
16
25
60
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 25A, VGS = 0V
37
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 25A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
35
61
2Independent of operating temperature.
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-15



Part Number P0903BDL
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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