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UNIKC
UNIKC


P0850AT

N-Channel Enhancement Mode MOSFET


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P0850AT pdf
P0850AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.85Ω @VGS = 10V
ID
8A
TO-220
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
8
5
30
6.8
Avalanche Energy
L = 10mH
EAS
232
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
125
50
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



No Preview Available !

P0850AT pdf
P0850AT
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
500
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5
4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 4A
0.65 0.85
Forward Transconductance1
gfs
VDS = 20V, ID = 4A
7
DYNAMIC
Input Capacitance
Ciss
1250
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
138
Reverse Transfer Capacitance
Crss
14
Total Gate Charge2
Qg
21.6
Gate-Source Charge2
Qgs VDD = 250V, ID = 4.8A, VGS = 10V
7.2
Gate-Drain Charge2
Qgd
6.6
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 250V, ID = 4.8A, RG=25Ω
71
112
Fall Time2
tf
69
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 4.8A, dlF/dt = 100A / mS
Qrr VGS = 0V
480
5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
8
1.7
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0850AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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