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UNIKC
UNIKC


P0806AT

N-Channel Enhancement Mode MOSFET


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P0806AT pdf
P0806AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID
82A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±25
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 0.1mH
ID
IDM
IAS
EAS
82
52
246
64
203
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
113
45
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.1
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



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P0806AT pdf
P0806AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
60
2.0 2.5
246
4.0
±1
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 62A
7.8 8.5
Forward Transconductance1
gfs
VDS = 5V, ID = 62A
67
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
4440
466
Reverse Transfer Capacitance
Crss
325
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.1
Total Gate Charge2
Qg
78
Gate-Source Charge2
Qgs VDD = 30V, VGS = 10V, ID = 62A
23
Gate-Drain Charge2
Qgd
27
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 30V,
ID = 62A, VGS = 10V, RGEN = 6Ω
95
43
Fall Time2
tf
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current2
IS
Forward Voltage1
VSD IF = 62A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 62A, dlF/dt = 100A / μS
64
105
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
82
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0806AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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