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UNIKC
UNIKC


P0804BD

N-Channel Enhancement Mode MOSFET


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P0804BD pdf
P0804BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 8.5mΩ @VGS = 10V
ID
50A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35
100
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
30
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-14



No Preview Available !

P0804BD pdf
P0804BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
40
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
1.5 2.0 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V , TC = 125 °C
VDS = 10V, VGS = 10V
50
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 16A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
11 15
7 8.5
25
DYNAMIC
Input Capacitance
Ciss
2100 2730
Output Capacitance
Coss
VGS = 0V, VDS = 20V, f = 1MHz
360 450
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
VGS = 10V, ID = 20A
VDS = 20V, RL = 1Ω
ID @ 20A, VGS = 10V, RGEN = 6Ω
330
43
6.3
5.5
6.8
18
26.5
8.7
415
11.2
28.8
42.5
15.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = 20A, VGS = 0V
50
100
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
75
55
2Independent of operating temperature.
3 Pulse width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-14



Part Number P0804BD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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