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P0803BVG

N-Channel Enhancement Mode MOSFET


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P0803BVG pdf
P0803BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 8mΩ @VGS = 10V
ID
13A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
13
8
50
Avalanche Current
IAS 50
Avalanche Energy
L = 0.1mH
EAS
125
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/16



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P0803BVG pdf
P0803BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
1.0 1.8 3.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
50
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 12A
VGS = 10V, ID = 15A
8.5 12
68
Forward Transconductance1
gfs
VDS = 10V, ID = 15A
25
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
1900
550
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg(4.5V)
Qg(10V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 12A
VDS = 15V, VGS = 10V, ID = 15A
VDD = 15V,
ID @ 15A, VGS = 10V, RGEN = 6Ω
400
2.5
20
45
7
12
20
48
96
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2.3A, dlF/dt = 100A / μS
100
440
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.3
1.1
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0803BVG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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