http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




UNIKC
UNIKC


P0803BDG

N-Channel Enhancement Mode MOSFET



No Preview Available !

P0803BDG pdf
P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.2mΩ @VGS = 10V
ID
60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
60
38
120
Avalanche Current
IAS 35
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.0 1 2014/5/6



No Preview Available !

P0803BDG pdf
P0803BDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
30
1
1.8 3
±250
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =10V, ID =25A
VGS =5V, ID =16A
8.8 9.2
15 19.4
Forward Transconductance1
On-State Drain Current1
gfs
ID(ON)
VDS =15V, ID =30A
VDS = 10V, VGS = 10V
26
120
S
A
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
910
300
pF
Reverse Transfer Capacitance
Crss
155
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.3
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS = 10V
VGS = 4.5V
Qgs
VDS =15V,
ID = 25A
17
8
5
Gate-Drain Charge2
Qgd
4
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V ,RL=0.75Ω
ID20A, VGS = 10V, RGEN =2.5Ω
15
13
102
Fall Time2
tf
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF =IS, VGS = 0V
38
1.3
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = IS, dlF/dt = 100A /mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
28 nS
18 nC
REV 1.0 2 2014/5/6



Part Number P0803BDG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
PDF Download
P0803BDG pdf
Download PDF File
P0803BDG pdf
View for Mobile



Featured Datasheets

Part Number Description Manufacturers PDF
P0803BDG N-Channel Enhancement Mode MOSFET P0803BDG
UNIKC
PDF
P0803BVG N-Channel Enhancement Mode MOSFET P0803BVG
UNIKC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components