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NIKO-SEM
NIKO-SEM


P0780ATFS

N-Channel High Voltage Mode Field Effect Transistor


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P0780ATFS pdf
NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P0780ATF:TO-220F
P0780ATFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
800V
1.94Ω
ID
7A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 ° C
TC = 100 ° C
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
800
±30
7
4
21
61
57
23
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.2
62.5
UNITS
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
800
2.5 3.5
4.5
V
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 800V, VGS = 0V , TC = 25 ° C
IDSS
VDS = 640V, VGS = 0V , TC = 100 ° C
1
A
100
REV 2.0
D-17-5
1



No Preview Available !

P0780ATFS pdf
NIKO-SEM
N-Channel High Voltage Mode
Field Effect Transistor
P0780ATF:TO-220F
P0780ATFS:TO-220FS
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 3.5A
VDS = 10V, ID = 3.5A
DYNAMIC
1.46 1.94
5
Input Capacitance
Ciss
1620
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
95
Reverse Transfer Capacitance
Crss
10
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 640V, ID =7A, VGS = 10V
VDD = 400V, ID =7A, RG= 6Ω
33
9.7
8.7
80
210
110
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3
Forward Voltage1
IS
VSD IF =7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =7A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
775
5.5
7
1.4
Ω
S
pF
nC
nS
A
V
nS
uC
REV 2.0
D-17-5
2



Part Number P0780ATFS
Description N-Channel High Voltage Mode Field Effect Transistor
Maker NIKO-SEM - NIKO-SEM
Total Page 4 Pages
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