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UNIKC
UNIKC


P0760ZTFS

N-Channel Enhancement Mode MOSFET


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P0760ZTFS pdf
P0760ZTF / P0760ZTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
640mΩ @VGS = 10V
ID
7A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
7
4.4
16
2
80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
32
12
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.9
62.5
UNITS
°C / W
REV 1.0
1 2017/1/23



No Preview Available !

P0760ZTFS pdf
P0760ZTF / P0760ZTFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 3.4
4
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 3.5A
1
mA
100
560 640
Forward Transconductance1
gfs
VDS = 10V, ID =3.5A
5.2 S
DYNAMIC
Input Capacitance
Ciss
559
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Co(er)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0 to 480V
VDD =480V, VGS = 10V, ID = 7A
VDD = 300V, ID = 7A,
RG= 10Ω
432
pF
11
33
20
3.4 nC
9.5
27
52
nS
70
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
7A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
256 nS
2.5 uC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2 2017/1/23



Part Number P0760ZTFS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 9 Pages
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