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UNIKC
UNIKC


P0703EV

P-Channel Enhancement Mode MOSFET



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P0703EV pdf
P0703EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ @VGS = -10V
ID
-15A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-15
-11
-67
Avalanche Current
IAS -66
Avalanche Energy
L = 0.1mH
EAS
218
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
25
UNITS
°C / W
REV 1.0
1 2014/10/16



No Preview Available !

P0703EV pdf
P0703EV
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1 -1.7 -3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -10A
VGS = -10V, ID = -15A
VDS = -5V, ID = -15A
6.8 12
4.8 7.5
25
DYNAMIC
Input Capacitance
Ciss
5590
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
1070
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -15A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V,
ID@ -15A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
889
120
16
30
10
16
200
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IS = -15A, VGS = 0V
-2
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -15A, di/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
42
30
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014/10/16



Part Number P0703EV
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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