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UNIKC
UNIKC


P0703BD

N-Channel Enhancement Mode MOSFET


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P0703BD pdf
P0703BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.5mΩ @VGS = 10V
ID
57A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
57
36
160
Avalanche Current
IAS 34
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
49
19
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Steady-State
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
63
UNITS
°C / W
REV 1.0 1 2014/5/5



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P0703BD pdf
P0703BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
GVoaltteagTehreshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
30
1
1.7 3.0
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =15A
VGS =10V, ID =20A
9.6 11.8
6 7.5
Forward Transconductance1
gfs
VDS =15V, ID =20A
19 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1210
306
182
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.45
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS = 10V
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V ,
ID10A, VGS = 10V, RGEN =6Ω
26.3
14.5
4.3
9
18
10
35
10
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
trr IF = 20A, dlF/dt = 100A /ms
22.6
Reverse Recovery Charge
Qrr
11
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
30
1.2
A
V
nS
nC
REV 1.0 2 2014/5/5



Part Number P0703BD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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