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P06P03LDG

P-Channel Enhancement Mode MOSFET



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P06P03LDG pdf
P06P03LDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID
-12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-12
-10
-30
Avalanche Current
IAS -29
Avalanche Energy
L = 0.1mH
EAS
42
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-13



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P06P03LDG pdf
P06P03LDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-30
-1 -1.5 -3
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-30
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -10A
VGS = -10V, ID = -12A
VDS = -10V, ID = -12A
60 75
37 45
16
DYNAMIC
Input Capacitance
Ciss
530
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
135
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -12A
Turn-On Delay Time2
td(on)
Rise Time2
tr VDS = -15V, RL = 1Ω
Turn-Off Delay Time2
td(off)
ID@ -1A, VGS = -10V, RGS = 6Ω
Fall Time2
tf
70
10
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -1A, VGS = 0V
-12
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -5A, dlF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
15.5
7.9
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-13



Part Number P06P03LDG
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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