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NIKO-SEM
NIKO-SEM


P06P03LCG

P-Channel Logic Level Enhancement



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P06P03LCG pdf
NIKO-SEM
P-Channel Logic Level Enhancement P06P03LCG
Mode Field Effect Transistor
SOT-89
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 45m
ID
-4A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
LIMITS
-30
±20
-4
-3
-20
0.78
0.62
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Case
RθJc
18 °C / W
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
160 °C / W
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
-30
-0.9 -1.5 -3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
1
µA
10
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = -5V, VGS = -10V
VGS = -4.5V, ID =- 3A
VGS = -10V, ID = -4A
VDS = -10V, ID = -4A
-20
60
37
16
A
75
m
45
S
Sep-26-2005
1



No Preview Available !

P06P03LCG pdf
NIKO-SEM
P-Channel Logic Level Enhancement P06P03LCG
Mode Field Effect Transistor
SOT-89
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -4A
VDS = -15V,
ID -1A, VGS = -10V, RGS = 6
530
135
70
10 14
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
trr IF = -4A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-2.1
-4
-1.2
15.5
7.9
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P06P03G”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
Sep-26-2005
2



Part Number P06P03LCG
Description P-Channel Logic Level Enhancement
Maker NIKO-SEM - NIKO-SEM
Total Page 5 Pages
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