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UNIKC
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P06P03LCG

P-Channel Enhancement Mode MOSFET


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P06P03LCG pdf
P06P03LCG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
45mΩ @VGS = -10V
ID
-3.5A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.5
-2.8
-20
Avalanche Current
IAS -19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.78
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
18
160
UNITS
°C / W
Ver 1.0
1 2012/4/12



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P06P03LCG pdf
P06P03LCG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -10V, VGS = -10V
VGS = -4.5V, ID = -3A
VGS = -10V, ID = -3.5A
VDS = -10V, ID = -3.5A
-30
-1 -1.5 -3
±100
-1
-10
-20
56 75
42 45
16
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
666
163
Reverse Transfer Capacitance
Crss
114
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -3.5A
Qgd
13
2.1
2.6
Turn-On Delay Time2
td(on)
5.7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -15V,
ID@ -3.5A, VGS = -10V, RGS = 6Ω
10
18
Fall Time2
tf
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -3.5A, dlF/dt = 100A / mS
Qrr
15.5
7.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-1
-1.2
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/12



Part Number P06P03LCG
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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