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Niko
Niko


P06B03LV

Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor



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P06B03LV pdf
NIKO-SEM Dual P-Channel Logic Level Enhancement P06B03LV
Mode Field Effect Transistor
SOP-8
www.DataSheet4U.com
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 50mΩ
ID
-6A
G :GATE
D :DRAIN
S :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
LIMITS
-30
±20
-6
-5
-30
2.5
1.3
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID =- 5A
VGS = -10V, ID = -6A
VDS = -10V, ID = -6A
LIMITS
MIN TYP MAX
UNIT
-30
-0.9 -1.5
-3
V
±100 nA
1
µA
10
-30
65
40
16
A
80
mΩ
50
S
MAY-19-2003
1



No Preview Available !

P06B03LV pdf
NIKO-SEM Dual P-Channel Logic Level Enhancement P06B03LV
Mode Field Effect Transistor
SOP-8
www.DataSheet4U.com
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -15V, f = 1MHz
530
135
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -6A
VDS = -15V, RL = 1Ω
ID -1A, VGS = -10V, RGS = 6Ω
70
10 14
2.2
2
5.7
10
18
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
trr IF = -5A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
-2.1
-4
-1.2
15.5
7.9
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P06B03LV”, DATE CODE or LOT #
MAY-19-2003
2



Part Number P06B03LV
Description Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker Niko - Niko
Total Page 5 Pages
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