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UNIKC
UNIKC


P0690ATFS

N-Channel Enhancement Mode MOSFET



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P0690ATFS pdf
P0690ATF / P0690ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
900V
2.35Ω @VGS = 10V
ID
6A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 900
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
6
3.5
18
45
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
52
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V ,L=10mH, starting TJ = 25°C.
RqJC
RqJA
TYPICAL
MAXIMUM
2.4
62.5
UNITS
°C / W
Ver 1.0
1 2012/6/14



No Preview Available !

P0690ATFS pdf
P0690ATF / P0690ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 480V, VGS = 0V, TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
900
2
3.4 4
±100
1
100
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 3A
2 2.35
Forward Transconductance1
gfs
VDS = 10V, ID = 3A
6
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 720V, VGS = 10V, ID = 6A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 450V, ID = 6A, RG = 6Ω
Fall Time2
tf
1610
89
9
34
10.5
11
80
190
120
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A,
dlF/dt = 100A / μS
545
3.6
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
2Independent of operating temperature.
3 Pulse width limited by maximum junction temperature.
6
1.4
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
μC
Ver 1.0
2 2012/6/14



Part Number P0690ATFS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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