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UNIKC
UNIKC


P0660AT

N-Channel Enhancement Mode MOSFET


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P0660AT pdf
P0660AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.25Ω @VGS = 10V
ID
6A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
6
4.3
20
Avalanche Energy3
EAS 45
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
113
45.4
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH, starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.1
62.5
UNITS
°C / W
REV 1.1
1 2013-11-20



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P0660AT pdf
P0660AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 600V, VGS = 0V, TC = 100 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
600
2.5 4.5
±250
25
250
20
0.98 1.25
8
V
nA
mA
A
Ω
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 300V, ID = 6A, VGS = 10V
VDD = 300V, ID = 6A,RG = 25Ω
1274
126
23
28.9
5.8
10
47
32
140
55
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dlF/dt = 100A / μS
560
6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
6
1.5
A
V
nS
nC
REV 1.1
2 2013-11-20



Part Number P0660AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 7 Pages
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