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UNIKC
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P062ABDF

N-Channel Enhancement Mode MOSFET



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P062ABDF pdf
P062ABDF
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 7mΩ @VGS = 10V
ID
75A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
75
50
170
Avalanche Current
IAS 45
Avalanche Energy
L=0.1mH
EAS
100
Power Dissipation
TC= 25 °C
TC= 100°C
PD
54
32.75
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.6
MAXIMUM
2.3
62.5
UNITS
°C / W
REV 1.0
1 2014/4/29



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P062ABDF pdf
P062ABDF
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
25
1 1.5
3
V
±250 nA
25 mA
250
170 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =5V, ID =24A
VGS =10V, ID =30A
6.5 10
5.1 7
Forward Transconductance1
gfs
VDS =15V, ID =30A
55 S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1825
717
553
1.25
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(10V)
Qg(5V)
Qgs(10V)
Qgs(5V)
VDD = 15V
ID = 25A
55
30
9.4
nC
8.8
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qgd(10V)
Qgd(5V)
td(on)
tr
td(off)
tf
VDS = 15V ,
ID30A, VGS = 10V, RG =2.5Ω
19.6
19
11.5
17
nS
32
7.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 30A, VGS = 0V
Reverse Recovery Time
trr
37
Peak Reverse Recovery Current IRM(REC)
IF = 30A, dlF/dt = 100A / ms
200
Reverse Recovery Charge
Qrr
0.042
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
40
1.3
A
V
nS
A
mC
REV 1.0
2 2014/4/29



Part Number P062ABDF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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