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P062ABDD

N-Channel Enhancement Mode MOSFET


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P062ABDD pdf
P062ABDD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 5.8mΩ @VGS = 10V
ID
83A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
83
53
180
Avalanche Current
IAS 40
Avalanche Energy
L=0.1mH
EAS
80
Power Dissipation
TC= 25 °C
TC= 100°C
PD
69
27
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A.
SYMBOL
RqJC
TYPICA MAXIMUM UNITS
L 2.55 °C / W
REV 1.0
1 2014/4/29



No Preview Available !

P062ABDD pdf
P062ABDD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
25
1
1.5 3
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =20A
6.7 9.8
3.9 5.8
Forward Transconductance1 gfs VDS =15V, ID =20A
43 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
1460
308
248
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS = 10V
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = 20A
VDS = 15V ,
ID1A, VGS = 10V, RGEN =6Ω
34
18
6
10
15
129
174
191
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
83 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / ms
21 nS
7.5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 60A.
REV 1.0
2 2014/4/29



Part Number P062ABDD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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