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UNIKC
UNIKC


P062ABD8

N-Channel Enhancement Mode MOSFET



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P062ABD8 pdf
P062ABD8
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 6mΩ @VGS = 10V
ID
60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
60
38
150
Avalanche Current
IAS 30
Avalanche Energy
L=0.1mH
EAS
131
Power Dissipation
TC= 25 °C
TC= 100°C
PD
36
14
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.5
40
UNITS
°C / W
REV 1.0
1 2014/4/29



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P062ABD8 pdf
P062ABD8
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55°C
VDS = 10V, VGS = 10V
25
1
150
3
±100
1
10
V
nA
mA
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =30A
VGS =10V, ID =30A
7.8 9.3
46
Forward Transconductance1
gfs
VDS =15V, ID =24A
30 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1740
504
pF
Reverse Transfer Capacitance
Crss
338
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 30A
VDS = 15V , RL = 3Ω
ID5A, VGS = 10V, RGEN =6Ω
37.2
6.8 nC
8.5
17
15
nS
111
71
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
50
31
1.16
A
V
nS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
40 nC
REV 1.0
2 2014/4/29



Part Number P062ABD8
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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