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NIKO-SEM
NIKO-SEM


P0610BTF

N-Channel Field Effect Transistor



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P0610BTF pdf
NIKO-SEM
N-Channel Enhancement Mode
P0610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ
ID
66A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
66
41
200
40
832
62.5
25
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
2
UNITS
°C/W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 20A
VGS =10V, ID = 20A
100
1.3
1.8 2.3
±100
1
10
68
5.4 6.5
V
nA
A
mΩ
REV 1.1
1
E-41-4



No Preview Available !

P0610BTF pdf
NIKO-SEM
N-Channel Enhancement Mode
P0610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 20A
DYNAMIC
133
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
6300
744
219
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V , ID =20A
VDS = 50V , ID 20A,
VGS = 10V, RGEN =6Ω
120
63
19.5
38
21
61
54
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 20A, dI/dt=100A/μs
65
176
52
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2
E-41-4



Part Number P0610BTF
Description N-Channel Field Effect Transistor
Maker NIKO-SEM - NIKO-SEM
Total Page 4 Pages
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