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UNIKC
UNIKC


P0603BEAD

N-Channel Enhancement Mode MOSFET



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P0603BEAD pdf
P0603BEAD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
56A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
56
Continuous Drain Current1,2
TC = 100 °C
TA = 25 °C
ID
35
14.5
Pulsed Drain Current1
TA = 70 °C
IDM
11.6
100
Avalanche Current
IAS 38
Avalanche Energy
L = 0.1mH
EAS
72
TC = 25 °C
31
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
12
2.1
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/6/18



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P0603BEAD pdf
P0603BEAD
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
Junction-to-Case
RqJA
RqJC
60
°C / W
3.5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 27A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper , in a still air
environment with TA=25°CThe value in any given application depends on the user's specific board design.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.7 2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
100
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
8.8 10
5.4 5.8
68 S
DYNAMIC
Input Capacitance
Ciss
1540
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
256 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
207
1.6 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 20A,
VGS=10V
VDS = 0.5V(BR)DSS,
ID @ 20A, VGS = 10V, RGEN = 6Ω
35.3
18.2
nC
6.4
9.5
31
18
nS
56
12
REV 1.0
2 2014/6/18



Part Number P0603BEAD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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