http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




UNIKC
UNIKC


P0603BDD

N-Channel Enhancement Mode MOSFET



No Preview Available !

P0603BDD pdf
P0603BDD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
71A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
71
45
180
Avalanche Current
IAS 41
Avalanche Energy
L=0.1mH
EAS
84
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 60A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.5 °C / W
REV 1.0 1 2014/5/4



No Preview Available !

P0603BDD pdf
P0603BDD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
30
1 1.7
3
V
±100 nA
1
mA
10
180 A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =20A
7.5 9
4.4 5.8
Forward Transconductance1
gfs
VDS =5V, ID =20A
57 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
1740
274
pF
Reverse Transfer Capacitance
Crss
224
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V,
ID = 20A
VDS = 15V ,
ID20A, VGS = 10V, RGEN =6Ω
36.9
6.3 nC
10.5
20
39
nS
158
91
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
71 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A /ms
30 nS
23 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 60A.
REV 1.0 2 2014/5/4



Part Number P0603BDD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
PDF Download
P0603BDD pdf
Download PDF File
P0603BDD pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
P0603BD N-Channel Enhancement Mode MOSFET P0603BD
UNIKC
PDF
P0603BDB N-Channel Enhancement Mode MOSFET P0603BDB
UNIKC
PDF
P0603BDD N-Channel Enhancement Mode MOSFET P0603BDD
UNIKC
PDF
P0603BDF N-Channel Enhancement Mode MOSFET P0603BDF
UNIKC
PDF
P0603BDG N-Channel Enhancement Mode MOSFET P0603BDG
UNIKC
PDF
P0603BDG N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG
NIKO-SEM
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components